Compact Modeling (with BSIM4 as an example for model parameter extraction): Part2

This a continuing tutorial series on model parameter extraction of MOSFETs using BSIM4 as the compact model. You can check part 1 here: https://youtu.be/bOjsWSB5o3g *Correction: At 33:54 I say that LDebye/3 is the max value of XDC, however, it is the an intermediate value of XDC possible in the CTM model because the factor LDebye/3 gets multiplied by an exponential (Vgb-Vfb) and hence LDebye/3 must be the value of XDC when Vgb=Vfb i.e. flatband voltage. The maximum value, according to the interpretation of LDebye as the screening length of the material, should be couple of LDebye because at LDebye itself the electric field screening is at its maximum(reduction of normal electrostatic field by ~63% i.e. to 1/e of the value with only one atom/molecule in free space). Thus, the range of XDC is: 0(Accumulation region) (less than) LDebye/3(at flatband condition Vgb=Vfb) (less than) Few Debye Lengths(at strong inversion) Please see a detailed explanation of Debye length in my tutorial on Plasma discharges and semiconductor processing: https://youtu.be/ms9wq-eroBM.