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In this video, I continue my discussion of the MOSFET gate capacitance, and explain what happens when we apply a gate voltage larger than VT. The capacitance increases to a value of Cox, but it is now actually distributed between the gate and the source/drain terminals.
This is part of my series on semiconductor physics (often called Electronics 1 at university). This is based on the book Semiconductor Physics and Devices by Donald Neamen, as well as the EECS 170A/174 courses taught at UC Irvine.
Hope you found this video helpful, please post in the comments below anything I can do to improve future videos, or suggestions you have for future videos.
